sotC23 driver transistors pnp silicon maximum r atings rating symbol mmbta55 mmbta56 unit collector?emitter voltage v ceo ?60 ?80 vdc collector?base voltage v cbo ?60 ?80 vdc emitter?base voltage v ebo ?4.0 vdc collector current ? continuous i c ?500 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c device marking m mbta55l t1 = 2h ; m mb t a56 l t1 = 2gm electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage (3) v (br)ceo vdc (i c = ?1.0 madc, i b = 0 ) m mbta55 ?60 ? m mbta56 ?80 ? emitter?base breakdown voltage v (br)ebo ?4.0 ? vdc (i e = ?100 adc, i c = 0 ) collector cutoff current i ceo ? ?0.1 adc ( v ce = ?60vdc, i b = 0) collector cutoff current i cbo adc ( v cb = ?60vdc, i e = 0) m mbta55 ? ?0.1 ( v cb = ?80vdc, i e = 0) m mbta56 ? ?0.1 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. pulse test: pulse width < 300 s, duty cycle < 2.0%. 2 emitter 3 collector 1 base value we declare that the material of product compliance with rohs requirements. mm bta5xlt1 2012-11 willas electronic corp. ? preliminary
electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain h fe ? (i c = ?10 madc, v ce = ?1.0 vdc) 100 ? (i c = ?100madc, v ce = ?1.0 vdc) 100 ? collector?emitter saturation voltage v ce(sat) ? ?0.25 vdc (i c = ?100madc, i b = ?10madc) base?emitter on voltage v be(on) ? ?1.2 vdc (i c = ?100madc, v ce = ?1.0vdc) smallCsignal characteristics current ?gain?bandwidth product(4) f t 50 ? mhz (v ce = ?1.0 vdc, i c = ?100madc, f = 100 mhz) 4. f t is defined as the frequency at which |h f e | extrapolates to unity. m mbta55lt1 2h 3000/tape & reel device marking shipping m mbta56lt1 2gm 3000/tape & reel ordering information figure 1. switching time test circuits output turn?on time ?1.0 v v cc +40 v r l * c s 6.0 pf r b 100 100 v in 5.0 f t r = 3.0 ns 0 +10 v 5.0 s output turn?off time +v bb v cc +40 v r l * c s 6.0 pf r b 100 100 v in 5.0 f t r = 3.0 ns 5.0 s *total shunt capacitance of test jig and connectors for pnp test circuits, reverse all voltage polarities 2012-11 willas electronic corp. driver transistors mm bta5xlt1 p r e l i m i n a r y
sot - 23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 201 2-11 w i l l a s e l e ct ro ni c co rp . driver transistors mm bta5xlt1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20) preliminary
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